Dependence of Recombination Radiation on Current in GaAs Diodes
- 1 May 1963
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 34 (5) , 1521-1523
- https://doi.org/10.1063/1.1729614
Abstract
The ``band‐edge'' radiation in a GaAs diode is calculated to be proportional to the diode current at high forward current, while at low currents it is proportional to the square of the current. The impurity radiation in a GaAs diode is shown to vary at high current at a rate smaller than the square root of the current. For efficient conversion of electrical energy into ``edge'' radiation, diodes should be operated at as high currents as possible compatible with no diode heating.This publication has 4 references indexed in Scilit:
- CorrespondenceProceedings of the IRE, 1962
- Direct recombination in GaAs and some consequences in transistor designSolid-State Electronics, 1961
- Carrier Generation and Recombination in P-N Junctions and P-N Junction CharacteristicsProceedings of the IRE, 1957
- Extension of the Theory of the Junction TransistorPhysical Review B, 1954