High-gain 9.25 GHz silicon bipolar transistor power amplifier
- 1 February 1979
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 15 (3) , 86-87
- https://doi.org/10.1049/el:19790063
Abstract
A four-stage silicon bipolar transistor power amplifier operating at centre frequency 9.25 GHz is reported. The amplifier has output power exceeding 1.0 W over an instantaneous bandwidth of approximately 800 MHz. The power-added efficiency of the amplifier is measured to be better than 18%.Keywords
This publication has 1 reference indexed in Scilit:
- Circuit device interface techniques for a 5-W 5-GHz bipolar microwave power transistorPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1977