Low temperature epitaxial NiSi2 formation on Si(111) by diffusing Ni through amorphous Ni–Zr
- 1 February 1990
- journal article
- Published by Springer Nature in Journal of Materials Research
- Vol. 5 (2) , 341-346
- https://doi.org/10.1557/jmr.1990.0341
Abstract
Although amorphous alloys are known to be good diffusion barriers, amorphous nickel-zirconium is shown to react with Si at relatively low temperatures. Diffusion of Ni at 350°C through an amorphous Ni–Zr buffer layer leads to the formation of epitaxial NiSi2 on single crystal silicon substrates. Interplay of mobility and thermodynamics is applicable for epitaxial silicide nucleation and growth. Also, a one-step annealing process in oxygen ambient leads to bilayer formation of NiSi2/ZrO2 structures on silicon substrates.Keywords
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