A method for selective substrate removal from thin p-type gallium arsenide layers
- 1 June 1974
- journal article
- Published by IOP Publishing in Journal of Physics E: Scientific Instruments
- Vol. 7 (6) , 493-495
- https://doi.org/10.1088/0022-3735/7/6/027
Abstract
A two-stage etching technique enables the substrates to be removed from thin p-type layers of gallium arsenide over large areas. An n-type 'blocking layer' is used to retard the etching front during the selective first stage and this is subsequently removed using a nonselective etch. Greater precision is offered by this method than by conventional etching techniques.Keywords
This publication has 1 reference indexed in Scilit:
- Electrolytic Removal of P-Type GaAs Substrates from Thin, N-Type Semiconductor LayersJournal of the Electrochemical Society, 1970