Use of Raman spectroscopy to characterize strain in III–V epilayers: Application to InAs on GaAs(001) grown by molecular-beam epitaxy
- 1 March 1989
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 7 (2) , 365-370
- https://doi.org/10.1116/1.584752
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