High quality epitaxy of YBa2Cu3O7−x on silicon-on-sapphire with the multiple buffer layer YSZ/CeO2
- 6 September 1993
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 63 (10) , 1429-1431
- https://doi.org/10.1063/1.109647
Abstract
High quality YBa2Cu3O7−x films on silicon‐on‐sapphire were grown using a multiple buffer layer, consisting of YSZ and CeO2. Ion channeling reveals the high crystalline perfection of the YBa2Cu3O7−x films. A channeling minimum yield for the Ba signal as low as 3% was measured. The normal state resistivity of 200 μΩ cm at 300 K, critical temperatures above 90 K, with transition widths down to 0.5 K, critical current densities above 2×106 A/cm2 at 77 K and surface resistance values of 1.4 mΩ at 18.9 GHz and 77 K confirm the high quality of the YBa2Cu3O7−x films. These results are very promising for integrated superconductor and semiconductor applications.Keywords
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