Effective mass effects in triangular quantum wells achieved from compositional grading
Open Access
- 1 January 1988
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 24 (8) , 1712-1715
- https://doi.org/10.1109/3.7101
Abstract
No abstract availableThis publication has 100 references indexed in Scilit:
- Growth of PbTe doping superlattices by hot wall epitaxyJournal of Crystal Growth, 1988
- Growth of PbTe/CdTe on GaAs (100)Journal of Vacuum Science & Technology B, 1987
- Nonrandom alloying in In0.52Al0.48As/InP grown by molecular beam epitaxyApplied Physics Letters, 1987
- Lead calcium telluride grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1986
- Ionized-cluster beam epitaxy of CdTe and its application to CdTe/PbTe multilayer structureThin Solid Films, 1985
- Effects of compositional grading on GaAs–Ga1−xAlxAs interface and quantum well electronic structureJournal of Vacuum Science & Technology B, 1983
- MBE techniques for IV–VI optoelectronic devicesProgress in Crystal Growth and Characterization, 1979
- Electrical and Optical Properties of Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972
- Magnetic Studies of the Alloy System SnTe–MnTeJournal of Applied Physics, 1970