Boundary conditions at grain boundaries
- 1 July 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (7) , 4209-4210
- https://doi.org/10.1063/1.332517
Abstract
Grain boundaries in polycrystalline semiconductor material are frequently idealized as surfaces possessing a characteristic surface recombination velocity. Minority carrier densities generated by external sources (electron beams, light, etc.) in polycrystalline p–n junctions must satisfy certain boundary conditions at these grain boundaries which will be derived. It will also be shown that a ‘‘folding technique’’ introduced recently to deal with this problem is of limited value.This publication has 3 references indexed in Scilit:
- The importance of the excitation volume in determination of surface recombination velocityIEEE Transactions on Electron Devices, 1982
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Drift fields in photovoltaic solar energy converter cellsProceedings of the IEEE, 1963