Carrier trap passivation in multicrystalline Si solar cells by hydrogen from SiNx:H layers
- 3 July 2006
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 89 (1) , 013508
- https://doi.org/10.1063/1.2219142
Abstract
Hydrogenation by high temperature rapid annealing of Si N x : H is found to be very effective on the defects responsible for the carrier trapping effect in multicrystalline silicon. The passivationeffect is reversible and is annihilated by a long thermal annealing. As for the passivation of deep, lifetime killing defects, the efficiency of “trap” removal by the short thermal treatment depends on the density of the Si N x : H layer. This effect is, in fact, well correlated with performance improvement observed in solar cells. The parallelism between the trap and recombination center passivationeffects suggests that they originate from the same defect.Keywords
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