A Mathematical Model of the Fluid Mechanics and Gas‐Phase Chemistry in a Rotating Disk Chemical Vapor Deposition Reactor

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Abstract
We describe a mathematical model of the coupled fluid mechanics and gas‐phase chemical kinetics in a rotating disk chemical vapor deposition reactor. The analysis is for the flow between an infinite radius, heated nonporous rotating disk and a parallel infinite radius porous surface through which reactive fluid is injected normal to the disk. The analysis extends the usual von Karman transformation to allow specification of the normal velocity at the porous disk, and reduces to a stagnation point flow in the limit of zero rotating rate. The deposition of silicon from silane is used as an example system. A new reaction mechanism and set of rate constants are given for the thermal decomposition of silane. We present an RRKM analysis of several of the unimolecular reactions in the mechanism. Calculated velocity and temperature profiles, chemical species density profiles, and deposition rates as functions of susceptor temperature, spin rate, and inlet flow velocity are presented.

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