The study of selectivity in silicon selective epitaxial growth
- 31 August 1994
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 25 (2-4) , 153-158
- https://doi.org/10.1016/0167-9317(94)90011-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Selective epitaxial growth by rapid thermal processingApplied Physics Letters, 1990
- Selective epitaxial silicon growth in the 650–1100 °C range in a reduced pressure chemical vapor deposition reactor using dichlorosilaneApplied Physics Letters, 1989
- Chemical Processes in Vapor Deposition of Silicon: I . Deposition from and Etching byJournal of the Electrochemical Society, 1975
- A Thorough Thermodynamic Evaluation of the Silicon-Hydrogen-Chlorine SystemJournal of the Electrochemical Society, 1972