Interstitial defect reactions in silicon
- 27 July 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (4) , 256-258
- https://doi.org/10.1063/1.98465
Abstract
Deep level transient spectroscopy has been employed in a study of impurity-interstitial defect reactions in silicon following room-temperature electron irradiation. Three defects have been isolated and identified from their reactions and electrical properties as Cs-Ci, Ci-Oi, and Ps-Ci. The Cs-Ci, ME[(0.10), (0.17)] and Ps-Ci, ME[(0.21), (0.23), (0.27), (0.30)] defects exhibit metastable structural transformations. Our results reveal the multistructural nature and chemical reactivity of the silicon self-interstitial.Keywords
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