Long-wavelength stacked SiGe/Si heterojunction internal photoemission infrared detectors using multiple SiGe/Si layers
- 2 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (18) , 2370-2372
- https://doi.org/10.1063/1.111617
Abstract
Utilizing low temperaturesiliconmolecular beam epitaxy growth, long‐wavelength stacked SiGe/Si heterojunction internal photoemission (HIP) infrared detectors with multiple SiGe/Si layers have been fabricated and demonstrated. Using an elemental boron source, high doping concentration (≊4×1020 cm−3) has been achieved and high crystalline quality multiple Si0.7Ge0.3/Si layers have been obtained. The detector structure consists of several periods of degenerately borondoped (≊4×1020 cm−3) thin (≤50 Å) Si0.7Ge0.3 layers and undoped thick (≊300 Å) Si layers. The multiple p +‐Si 0.7Ge0.3/undoped‐Si layers show strong infrared absorption in the long‐wavelength regime mainly through free‐carrier absorption. The stacked Si0.7Ge0.3/Si HIP detectors with p=4×1020 cm−3 exhibit strong photoresponse at wavelengths ranging 2–20 μm with quantum efficiencies of about 4% and 1.5% at 10 and 15 μm wavelengths, respectively. The detectors show near ideal thermionic‐emission limited dark current characteristics.Keywords
This publication has 8 references indexed in Scilit:
- Heterojunction internal photoemission Si0.7Ge0.3/Si infrared detectorOptical Engineering, 1994
- Intervalence-subband transition in SiGe/Si multiple quantum wells−normal incident detectionApplied Physics Letters, 1992
- Elemental boron-doped p+-SiGe layers grown by molecular beam epitaxy for infrared detector applicationsApplied Physics Letters, 1992
- Normal incidence infrared detector using p-type SiGe/Si multiple quantum wellsApplied Physics Letters, 1992
- Advanced Si IR detectors using molecular beam epitaxyPublished by SPIE-Intl Soc Optical Eng ,1991
- Long-wavelength Ge/sub x/Si/sub 1-x//Si heterojunction infrared detectors and 400*400-element imager arraysIEEE Electron Device Letters, 1991
- Novel Si1−xGex/Si heterojunction internal photoemission long-wavelength infrared detectorsApplied Physics Letters, 1990
- Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxyThin Solid Films, 1989