Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy
- 1 November 1997
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 82 (9) , 4681-4683
- https://doi.org/10.1063/1.366208
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Inversion domains in GaN grown on sapphireApplied Physics Letters, 1996
- Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire SubstrateJapanese Journal of Applied Physics, 1996
- Aluminum nitride films on different orientations of sapphire and siliconJournal of Applied Physics, 1996
- Formation of threading defects in GaN wurtzite films grown on nonisomorphic substratesApplied Physics Letters, 1995
- Initial stage of aluminum nitride film growth on 6H-silicon carbide by plasma-assisted, gas-source molecular beam epitaxyApplied Physics Letters, 1995
- Microstructure of AlN on Si (111) grown by plasma-assisted molecular beam epitaxyApplied Physics Letters, 1994