Auger electron and x-ray photoelectron spectroscopy analysis of the hydrogenated amorphous silicon-tin oxide interface: Evidence of a plasma-induced reaction
- 1 July 1983
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 101-102
- https://doi.org/10.1063/1.94143
Abstract
Auger electron and x-ray photoelectron spectroscopies have been used to examine the chemistry of the hydrogenated amorphous silicon-tin oxide interface. Elemental tin is found in excess at the interface. Silicon dioxide resulting from a plasma-induced reduction of the tin dioxide surface is found throughout the thin silicon layer and peaks at the hydrogenated amorphous silicon-tin oxide interface.Keywords
This publication has 12 references indexed in Scilit:
- ESCA studies of metal-oxygen surfaces using argon and oxygen ion-bombardmentPublished by Elsevier ,2001
- An XPS study of the influence of ion sputtering on bonding in thermally grown silicon dioxideJournal of Vacuum Science & Technology B, 1983
- Degradation of ITO Film in Glow-Discharge PlasmaJapanese Journal of Applied Physics, 1981
- The M4,5N4,5N4,5Auger spectrum of tin and oxidised tinJournal of Physics C: Solid State Physics, 1979
- Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPSJournal of Vacuum Science and Technology, 1979
- Auger and electron energy loss spectroscopy of oxygen chemisorption on tinApplications of Surface Science, 1979
- Quantitative electron spectroscopy of surfaces: A standard data base for electron inelastic mean free paths in solidsSurface and Interface Analysis, 1979
- Oxidation of tin: An ESCA studyJournal of Vacuum Science and Technology, 1978
- Amorphous silicon solar cellApplied Physics Letters, 1976
- An ESCA Study of the Oxide at the Si ‐ SiO2 InterfaceJournal of the Electrochemical Society, 1975