Direct experimental evidence for trap-state mediated excitation of Er3+ in silicon
- 17 July 1995
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 67 (3) , 377-379
- https://doi.org/10.1063/1.114634
Abstract
The time evolution of the 1.54 μm Er3+ photoluminescence intensity of Er‐doped silicon following a 30 μs excitation pulse is investigated. It is found that at 9 K, the 1.54 μm luminescence from Er3+ continues to increase up to 50 μs after the pulse is terminated, when excess photocarriers no longer exist. This provides the first direct experimental evidence that a state in the forbidden gap of silicon acts as the gateway to the excitation of Er3+. Further analysis indicates recombination of bound excitons to be the most likely excitation mechanism.Keywords
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