Laser purification of silane: impurity reduction to the sub-part-per-million level
- 1 August 1980
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (8) , 4471-4474
- https://doi.org/10.1063/1.328268
Abstract
Selective ultraviolet photolysis of AsH3 and PH3 impurities in SiH4 has been employed to photochemically purify the SiH4. At ambient temperature, initial impurity levels of 50 ppm each of AsH3 and PH3 in SiH4 were reduced to less than 0.5 ppm upon irradiation with a 193‐nm ArF excimer laser. Lowering the temperature at which the photolysis is carried out to below ambient results in a substantial reduction in the laser energy required for impurity removal.This publication has 9 references indexed in Scilit:
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