Optical study of complex formation in Ag-doped CdTe

Abstract
The thermal instability of substitutional Ag doping on Cd sites in CdTe is studied with optical spectroscopy. For Ag doping levels above 1016 cm3 the AgCd concentration decreases gradually during several months while complex defects are formed, as evidenced by the evolution of low-temperature bound-exciton spectra. In particular, such a bound exciton (BE), X2Ag, at 1.5815 eV has been studied in this work, as a typical example of complex Ag-related defects created in the course of release of Ag from Cd sites. A rich phonon spectrum is found to couple to this BE, as expected for a complex defect involving an interstitial species. Dye-laser-excited photoluminescence excitation (PLE) spectra reveal a single lowest BE state, with an orbitally excited (electron) state 8.6 meV higher. An activation energy of 8.8 meV is also found for the thermal quenching of the X2Ag PL emission, interpreted as an 1s-2s rate-limiting excitation of the electron in the BE, in good agreement with PLE data. Zeeman splitting of the 1.5815-eV X2Ag BE line is consistent with the assumption of an electron-hole pair bound to a neutral ‘‘isoelectronic’’ defect of a symmetry lower than tetrahedral. Further, the local potential of this defect is predominantly hole attractive, while the electron is loosely bound in a shallow donorlike state. The hole is a mz=±(3/2) state, as expected for an average tensional local strain field. A tentative identification is discussed in terms of a AgCd-Agi pair, assumed to be produced by the spontaneous release of AgCd into interstitial (i) sites, with a rather high mobility of the Agi interstitial also at room temperature. An alternative defect model, a pair of a Cd vacancy and an Agi interstitial, cannot presently be excluded, however. A similar thermal instability of CuCd at a slightly higher doping level is found not to produce strong new BE spectra as for the AgCd case.