Properties of sputtered tungsten silicide films deposited with different argon pressures
- 1 March 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 39 (1-4) , 302-305
- https://doi.org/10.1016/0168-583x(89)90792-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Composition and Resistivity of Sputtered Tungsten SilicidesJournal of the Electrochemical Society, 1988
- Changes in Resistivity and Composition of Chemical Vapor Deposited Tungsten Silicide Films by AnnealingJournal of the Electrochemical Society, 1986
- Argon Entrapment and Evolution in Sputtered TaSi2 FilmsJournal of the Electrochemical Society, 1985