Inhomogeneous broadening of intersubband transitions in As/As multiple quantum wells
- 15 April 1997
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 55 (15) , 9731-9739
- https://doi.org/10.1103/physrevb.55.9731
Abstract
The contributions of homogeneous and inhomogeneous broadening mechanisms to the linewidth of an intersubband transition in an As/ As multiple quantum well are determined by line-shape fitting and saturation intensity spectroscopy. An intersubband transition at 327 meV is found with a total linewidth of 36 meV and an underlying homogeneous linewidth of 14 meV. The sizes of various sources of inhomogeneous broadening are estimated and the implications for intersubband nonlinear optics are discussed.
Keywords
This publication has 41 references indexed in Scilit:
- Comparative analysis of optically pumped intersubband lasers and intersubband Raman oscillatorsJournal of Applied Physics, 1995
- Quantum Cascade LaserScience, 1994
- Two-photon absorption and nonresonant nonlinear index of refraction in the intersubband transitions in the quantum wellsApplied Physics Letters, 1993
- Effect of many-body corrections on intersubband optical transitions in GaAs–AlxGa1−x As multiple quantum wellsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Tunneling assisted modulation of the intersubband absorption in double quantum wellsApplied Physics Letters, 1991
- Detailed analysis of second-harmonic generation near 10.6 μm in GaAs/AlGaAs asymmetric quantum wellsApplied Physics Letters, 1990
- Effects of Hartree, exchange, and correlation energy on intersubband transitionsJournal of Applied Physics, 1989
- Observation of extremely large quadratic susceptibility at 9.6–10.8μm in electric-field-biased AlGaAs quantum wellsPhysical Review Letters, 1989
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Synthetic nonlinear semiconductorsIEEE Journal of Quantum Electronics, 1983