Abstract
Measurements have been made of current density versus electric field on < 111 > and < 100 > oriented samples of n‐Si at 77 K with resistivities ranging from 0.050 to 200 Ω cm. These have been analyzed to yield the concentration and field dependence of repopulation resulting from a < 100 > application of electric field. The magnitude of the repopulation has been found to be extremely sensitive to the free‐carrier concentration. This sensitivity is attributed to the energy exchange effects of intervalley electron‐electron scattering. The repopulation provides a new and highly selective experimental parameter for use in the study of electron‐electron scattering in semiconductors.

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