Dielectric Properties of Y2O3 Thin Films Prepared by Vacuum Evaporation

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Abstract
The dielectric films formed by evaporating Y2O3 in vacuum have been identified with sesquioxide by infrared transmission, electron and X-ray diffraction studies. Thin film capacitors using this dielectric material exhibit excellent electric stability in high termperature and can be reproduced easily in a closed-cycle process with electron beam equipment. The dielectric constant is 13 and dissipation factor, tan δ, is 0.003 at room temperature with a breakdown field strength of 3×106 V/cm. The temperature coefficient of Y2O3 film capacitor is about 300 ppm/°C.

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