Modulation-Doped In0.5Al0.5P/GaAs Field-Effect Transistors
- 1 May 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (5A) , L922-923
- https://doi.org/10.1143/jjap.27.l922
Abstract
In0.5Al0.5P/GaAs modulation-doped field-effect transistors (MODFETs) have been fabricated to study the applicability of In0.5(Ga1-x Al x )0.5P/GaAs heterostructures to electronic devices. A DC transconductance of 250 mS/mm and a noise figure of 1.7 dB with associated gain of 10 dB at 12 GHz were obtained for a MODFET with a 0.25 µm-long and 200 µm-wide gate. Improvements in the performance are expected by Al-composition optimization for the InGaAlP. These results show the promising potential of In0.5(Ga1-x Al x )0.5P/GaAs MODFETs as high-frequency and high-speed devices.Keywords
This publication has 7 references indexed in Scilit:
- Two-Dimensional-Electron Gas in Undoped and Selectively-Doped GaInP/GaAs Heterostructures Grown by Chloride-Vapor-Phase EpitaxyJapanese Journal of Applied Physics, 1987
- Interface properties for GaAs/InGaAlP heterojunctions by the capacitance-voltage profiling techniqueApplied Physics Letters, 1987
- Growth of high-quality inGaAIP epilayers by MOCVD using methyl metalorganics and their application to visible semiconductors lasersJournal of Crystal Growth, 1986
- Se-related deep levels in InGaAlPJournal of Applied Physics, 1986
- Selectively Doped n-GaInP/GaAs Heterostructures Grown by MOCVDJapanese Journal of Applied Physics, 1986
- Band discontinuity for GaAs/AlGaAs heterojunction determined by C-V profiling techniqueJournal of Applied Physics, 1985
- Heterostructure bipolar transistors: What should we build?Journal of Vacuum Science & Technology B, 1983