INVESTIGATION OF SURFACE STATES ON SEMICONDUCTORS BY THE PULSED FIELD EFFECT
- 1 January 1963
- journal article
- Published by Wiley in Annals of the New York Academy of Sciences
- Vol. 101 (3) , 960-972
- https://doi.org/10.1111/j.1749-6632.1963.tb54949.x
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- The capture of holes in deep-lying acceptor levels in gold-doped germaniumJournal of Physics and Chemistry of Solids, 1961
- Cross sections of midgap surface states in silicon by pulsed field effect experimentJournal of Physics and Chemistry of Solids, 1960
- Fast surface states in germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1960
- Measurement of Germanium Surface States by Pulsed Channel EffectPhysical Review B, 1958