A theoretical and experimental study has been performed for the feasibility of epitaxial growth in a furnace. In this study, it is proven that growth in a hot‐wall furnace in principle is possible — without deposition of silicon on the quartz ware of the cell — when the growth is carried out at near equilibrium conditions. For supersaturations larger than 10%, deposition also occurs on the quartz of the wafer boat or cell. A constant supersaturation, i.e., a constant growth rate at all slices along the reactor tube can be achieved by imposing a temperature gradient over the cell. The best results are obtained for growth with , low Cl/H ratio, and high temperatures. Growth rates amount to 0.1–0.3 μm/min for these conditions.