I n s i t u infrared spectroscopy of molecular-beam epitaxy grown GaAs

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Abstract
Infrared spectroscopy of adsorbed molecules has been used to characterize semiconductor surfaces before, during, and after molecular-beam epitaxy growth. The technique relies on the principle of multiple internal reflections to enhance the weak response arising from the molecules adsorbed onto the semiconductor surface or trapped within the film. The resulting IR spectrum due to the adsorbed molecules provides detailed information about the chemical and physical structural bonding properties both within the epitaxial layer and at the semiconductor–vacuum interface. The experimental setup is compatible with UHV requirements and has been utilized in the pressure range from atmospheric down to the low-10−10 Torr level.

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