High room temperature peak-to-valleycurrent ratio in Sibased Esaki diodes
- 24 June 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (13) , 1111-1112
- https://doi.org/10.1049/el:19990728
Abstract
Room temperature (RT) I–V characteristics of epitaxially grown Si/SiGe/Si p+/i/n+ Esaki diodes are presented. The incorporation of Ge within the intrinsic (i) zone gives rise to an increased peak current density (jP = 3 kA/cm2) and peak-to-valley current ratio (PVCR) compared to pure Si structures (jP = 80 A/cm2). A detailed investigation and optimisation of post-growth annealing has demonstrated a record PVCR of 4.2 for Si based Esaki diodes.Keywords
This publication has 6 references indexed in Scilit:
- Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodesApplied Physics Letters, 1998
- Digital circuit applications of resonant tunneling devicesProceedings of the IEEE, 1998
- Resonant tunneling diodes: models and propertiesProceedings of the IEEE, 1998
- Forward-bias characteristics of Si bipolar junctions grown by molecular beam epitaxy at low temperaturesApplied Physics Letters, 1993
- Resonant tunneling through quantum wells at frequencies up to 2.5 THzApplied Physics Letters, 1983
- An alloy process for making high current density silicon tunnel diode junctionsSolid-State Electronics, 1965