Monolithic pin HEMT receiver for long wavelength optical communications
- 15 September 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (19) , 1246-1248
- https://doi.org/10.1049/el:19880848
Abstract
An AlInAs/GaInAs high electron mobility transistor (HEMT) has been monolithically integrated with an InP/GaInAs pin photodiode for the first time. Transconductance of the integrated HEMT is 270 mS/mm at 1 μm gate length. The high transconductance has resulted in improved receiver sensitivity, −23.7 dBm at 2 Gbit/s.Keywords
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