Temperature effects in m.o.s. transistors
- 1 June 1966
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 2 (6) , 190-191
- https://doi.org/10.1049/el:19660160
Abstract
The effects of temperature on m.o.s. transistors, operated in the pinchoff mode under constant-current conditions, are examined. A theoretical derivation, which accounts for interface and substrate conditions, is presented for the temperature coefficient of the gate-source voltage. Experimental measurements on both n- and pchannel silicon m.o.s. transistors are compared with theory.Keywords
This publication has 1 reference indexed in Scilit:
- M.O.S. transistor as a 4-terminal deviceElectronics Letters, 1966