Growth of highly textured LiNbO3 thin film on Si with MgO buffer layer through the sol-gel process
- 29 April 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (18) , 2523-2525
- https://doi.org/10.1063/1.115842
Abstract
Highly textured ferroelectric LiNbO3 thin films have been grown on MgO‐buffered Si (100)/(111) through the sol‐gel process under optimum conditions. These films show a high degree of c‐axis orientation regardless of the orientation of the Si substrates. Structural properties of the films were strongly influenced by the thickness of the MgO buffer layer probably due to the strains induced by the lattice and the thermal mismatch. Optimum thickness of the MgO buffer layer was found to be about 50 nm for the growth of a highly textured LiNbO3 film. An epitaxial‐like growth was observed by x‐ray pole figure analysis for the film on MgO/Si(111) obtained under a rapid thermal process above 900 °C. The surface morphology investigated by atomic force microscopy showed a growth behavior of crystalline grains as the thermal process was varied.Keywords
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