Nitridation impact on thin oxide charge trapping
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4) , 211-214
- https://doi.org/10.1016/s0167-9317(97)00050-6
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- On the charge build-up mechanisms in gate dielectricsSolid-State Electronics, 1994
- High-field electron trapping in SiO2Journal of Applied Physics, 1977
- Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage charactersitcs of MOS structuresJournal of Applied Physics, 1976
- A quasi-static technique for MOS C-V and surface state measurementsSolid-State Electronics, 1970