RF Sputtering of Multilayer Thin Films

1 January 1969

journal article
Published by American Vacuum Society in Journal of Vacuum Science and Technology

Vol. 6 (1) , 109-111
https://doi.org/10.1116/1.1492637

Abstract

Thin-film deposition rates and uniformity are presented for a large area rf diode of conventional style, with optimized parameters producing 1500 Å/min copper and 500 Å/min SiO2 without external magnetic field. Measurements of rate and corresponding uniformity were also made for Si3N4, Al2O3, nickel, molybdenum, and gold, where the thickness uniformity inside a 5-in.-diam. circle was ±2.5% for nickel and ±2% for SiO2. The sputtering apparatus consists of two 8-in.-diam water-cooled targets fed with 2.5 kW rf power, spaced 1-in. away from the substrate table. Influence of forward-coupled rf power on rate is also discussed.

Keywords

THIN FILM

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