Effect of hydrogen passivation on Be-doped AlGaAs/GaAs quantum wells
- 4 March 1996
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 68 (10) , 1365-1367
- https://doi.org/10.1063/1.116081
Abstract
Hydrogen passivation of high quality AlGaAs/GaAs:Be quantum wells(QWs) is studied by photoluminescence (PL) spectroscopy. The interaction of hydrogen with both Be dopants and QW interfaces is analyzed. The efficiency of Be acceptor passivation by hydrogen is shown to be dependent on the Be concentration. By comparing the PL spectra of the QW structures with different doping level, before and after hydrogenation, a partial (up to 50%) deactivation of Be atoms is revealed. It is also shown that a prolonged hydrogenation strongly degrades the interface sharpness, presumably due to hydrogen‐enhanced intermixing.Keywords
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