Gainas pin photodiode/GaAs preamplifier photoreceiver for gigabit-rate communications systems using flip-chip bonding techniques
- 4 August 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (16) , 995-996
- https://doi.org/10.1049/el:19880677
Abstract
We report on an integrated photoreceiver using a flip-chip bonding technique. The integrated photoreceiver consists of a back-illuminated GaInAs/InP pin photodiode with a small junction area and a GaAs high-impedance preamplifier having a two-stage amplifier. The quantum efficiency and the cut-off frequency of the pin photodiode were 81% and 19 GHz. This photoreceiver exhibited good practical performance characteristics, including a minimum detectable power of −29.8dBm at 1 Gbit/s, and −26.9 dBm at 2 Gbit/s.Keywords
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