Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- 30 June 2003
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 42 (Part 1, No) , 4138-4141
- https://doi.org/10.1143/jjap.42.4138
Abstract
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