A new electromigration testing technique for rapid statistical evaluation of interconnect technology

1 December 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (12) , 667-668
https://doi.org/10.1109/edl.1986.26513

Abstract

We describe a test structure and a testing technique that allows simultaneous stressing of 50 or more parallel thin film lines of the same width. This technique allows determination of the mean time to electromigration-induced failure and the deviation in the time to failure in a single test. This technique allows more rapid statistical evaluation of new or modified interconnect technologies.

Keywords

ELECTROMIGRATION
CIRCUIT TESTING
CURRENT DENSITY
VOLTAGE
OPTICAL FILMS
OPTICAL SENSORS
MONITORING
CONTACT RESISTANCE
TRANSISTORS
TEMPERATURE