High mobility two-dimensional electron gas in InP/Ga 0.47 In 0.53 As heterojunctions grown by low-pressure organometallic vapour phase epitaxy
- 18 February 1988
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 24 (4) , 226-227
- https://doi.org/10.1049/el:19880151
Abstract
The two-dimensional electron gas in InP/GaInAs heterojunctions, grown by LP-OMVPE, showed Hall mobilities as high as 164 000 and 103 000 cm2/Vs at 4 K and 80 K, respectively. A maximum Hall mobility of 172 000 cm2/Vs was measured at 20 K. Shubnikov-de Haas oscillations measured at 200 mK in magnetic fields up to 20 T indicated the total absence of parallel conduction. By illuminating the sample it was possible to populate the second electrical sub-band at a total carrier density ns = 4.4 × 1011 cm−2.Keywords
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