The formation of the GaInP(100) interface
- 3 October 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 162 (1-3) , 617-621
- https://doi.org/10.1016/0039-6028(85)90956-2
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- Metal contacts on semiconductors: The adsorption of Sb, Sn, and Ga on InP(110) cleaved surfacesJournal of Vacuum Science & Technology B, 1984
- The adsorption of Ga and Sb on cleaved InP surfacesVacuum, 1983
- Photoemission studies of room-temperature oxidized Ga surfacesSurface Science, 1982
- ESCA studies of some AIIIBv compounds with Ga and AsPhysica Status Solidi (b), 1973