Reduction of current leakage in chemical-vapor deposited Ta2O5 thin-films by oxygen-radical annealing [DRAM dielectric]
- 1 September 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (9) , 431-433
- https://doi.org/10.1109/55.536283
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- The Irradiation Effects of an Oxygen Radical Beam on the Preparation of Superconducting Thin FilmsJapanese Journal of Applied Physics, 1991
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