Observation of P donors on the Si(111) surface by scanning tunneling microscopy
- 20 April 1997
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 38 (3) , 177-182
- https://doi.org/10.1209/epl/i1997-00222-0
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Direct Observation of Friedel Oscillations around Incorporated SDopants in GaAs by Low-Temperature Scanning Tunneling MicroscopyPhysical Review Letters, 1996
- Scanning tunneling microscopy studies of Si donors () in GaAsPhysical Review Letters, 1994
- Direct imaging of dopants in GaAs with cross-sectional scanning tunneling microscopyApplied Physics Letters, 1993
- Possible solution of the conductivity exponent puzzle for the metal-insulator transition in heavily doped uncompensated semiconductorsPhysical Review Letters, 1993
- A digital control system for scanning tunnelling microscopy and atomic force microscopyMeasurement Science and Technology, 1993
- Many-body calculation of the surface-state energies for Si(111)2×1Physical Review Letters, 1991
- Cluster study of the Si(111)2×1 reconstructionSurface Science, 1988
- Electronic Structure of the Si(111)2 × 1 Surface by Scanning-Tunneling MicroscopyPhysical Review Letters, 1986
- Real-space observation ofπ-bonded chains and surface disorder on Si(111)2×1Physical Review Letters, 1986
- Resistivity‐Dopant Density Relationship for Phosphorus‐Doped SiliconJournal of the Electrochemical Society, 1980