Calculations of implanted-ion range and energy-deposition distributions:11B in Si

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Abstract
The integro-differential equations for moments of range and energy-deposition distributions of heavy ions implanted into amorphous targets are solved by an improved method, allowing accuracy to be retained to higher energies. Correlation of electronic stopping with scattering is found to have negligible effects on the calculated distributions for those scattering cross sections for which uncorrelated-stopping calculations are meaningful; however inclusion of correlation allows a wider range of scattering potentials to be used in the calculations. Effects of varying this potential are explored and it is indicated that a careful study of the collision cascade could provide information about the potential. Computation has been done for 11B implanted into Si at energies from 1 keV to 10 MeV. Some comparison of the range calculations with experiment has been made.