Low-frequency noise spectrum of GaAs FETs
- 28 May 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (11) , 387-388
- https://doi.org/10.1049/el:19810271
Abstract
In GaAs MESFETs low-frequency noise spectra of various forms are observed. In some cases they are of the form (A/f) {1−(2/π) tan−1 (ωτ0)}. The bias dependence of A and τ0 is attributed to the variation in channel thickness. Usefulness of low-frequency spectra for MESFET design and application is outlined.Keywords
This publication has 0 references indexed in Scilit: