Design and characterization of Si integrated inductors

27 November 2002

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 1395-1401
https://doi.org/10.1109/imtc.1998.676983

Abstract

This work describes a method to derive from measurements an accurate lumped element model of spiral integrated inductors on silicon sub- strate. The analysis method is based on a wide- band two-port measurement of the S-parameters of the device under test and enables an accurate evaluation of the parasitic effects that limit the per- formance of these integrated devices.

Keywords

This publication has 6 references indexed in Scilit:

Modeling, characterization and design of monolithic inductors for silicon RFICs
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
Fully Integrated Low Phase-Noise VCOs: from Post-Processing to Standard CMOS
Published by Springer Nature ,1997
Microwave inductors and capacitors in standard multilevel interconnect silicon technology
IEEE Transactions on Microwave Theory and Techniques, 1996
High Q inductors for wireless applications in a complementary silicon bipolar process
IEEE Journal of Solid-State Circuits, 1996
Coplanar waveguides and microwave inductors on silicon substrates
IEEE Transactions on Microwave Theory and Techniques, 1995
Design of Planar Rectangular Microelectronic Inductors
IEEE Transactions on Parts, Hybrids, and Packaging, 1974