Polarization dependent X-ray absorption studies of the chemical bonds anisotropy in wurtzite GaN grown at different conditions
- 1 October 2001
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 328 (1-2) , 77-83
- https://doi.org/10.1016/s0925-8388(01)01349-4
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Electronic states in valence and conduction bands of group-III nitrides: Experiment and theoryPhysical Review B, 2000
- N-edge x-ray-absorption study of heteroepitaxial GaN filmsPhysical Review B, 1997
- Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3Journal of Applied Physics, 1996
- Analytical thermal lens instrumentationReview of Scientific Instruments, 1996
- Microstructural characterization of α-GaN films grown on sapphire by organometallic vapor phase epitaxyApplied Physics Letters, 1995
- First-principles calculation of the structural, electronic, and vibrational properties of gallium nitride and aluminum nitridePhysical Review B, 1993