Testing for coupled cells in random-access memories

13 January 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 439-451
https://doi.org/10.1109/test.1989.82327

Abstract

Five test strategies for memory testing are compared for their ability to detect coupled-cell faults in an n-word-by-1-b random-access memory. In all five test strategies the data-in line is randomly driven. Three of five strategies use random selection of both the address lines and the read/write control. The other two strategies sequentially cycle through the address space with deterministic setting of the read/write control. The relative merit of these five strategies is measured by the average number of accesses per address needed to meet a standard test quality level. It is concluded that ETWO (explicit memory test with word operations) offers the best performance and is quite easy to implement.

Keywords

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