Theory of Seebeck Effect in Plastically Deformed Semiconductors

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Abstract
The effects of the reduction of free electron density due to the dislocation-acceptors and the scattering due to the space charge around the dislocation on the thermoelectric power of n -type materials are theoretically investigated in the temperature covering from impurity- to transition-range and compared with the experimental data for near intrinsic n -Ge in only the transition range of temperature. In the intrinsic range of temperature the scattering effect due to the lattice deformation around the dislocation is discussed and compared also with the experimental data.

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