A 3.42 /spl mu/m/sup 2/ Flash Memory Cell Technology Conformable to a Sector Erase

Publisher Website

1 January 1991

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 77-78
https://doi.org/10.1109/vlsit.1991.705998

Abstract

No abstract available

Keywords

This publication has 1 reference indexed in Scilit:

An investigation of erase-mode dependent hole trapping in flash EEPROM memory cell
IEEE Electron Device Letters, 1990