Variation of the Shubnikov-de Haas amplitudes with ionic scattering in silicon inversion layers
- 15 November 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 18 (10) , 5502-5505
- https://doi.org/10.1103/physrevb.18.5502
Abstract
The Shubnikov-de Haas effect has been measured in silicon inversion layers as a function of temperature, carrier density, and oxide charge density. The dependence on oxide charge density provides a critical test of the theory of ionic scattering in the Shubnikov-de Haas effect. The data are found to be in excellent agreement with theory. The temperature dependence permits the study of electron effectie masses. We give a more detailed account of the dependence of the electron effective mass on ionic scattering and the effective mass extrapolated to zero ionic scattering.Keywords
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