Investigation of amorphous silicon compensated materials over a wide range of dopant concentrations
- 1 July 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 303 (1-2) , 269-272
- https://doi.org/10.1016/s0040-6090(97)00067-9
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Thermally induced metastability in compensated and delta-doped amorphous siliconPhilosophical Magazine Part B, 1991
- Experimental tests of the autocompensation model of dopingPhilosophical Magazine Part B, 1991
- Defects and disorder broadened band tails in compensated hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1991
- Electron and hole transport in compensated amorphous siliconPhilosophical Magazine Part B, 1990
- Detailed investigation of doping in hydrogenated amorphous silicon and germaniumPhysical Review B, 1987
- Effects of dopants and defects on light-induced metastable states ina-Si:HPhysical Review B, 1985
- Localized states in compensatedPhysical Review B, 1984
- Doping and the Fermi Energy in Amorphous SiliconPhysical Review Letters, 1982
- Direct measurement of gap-state absorption in hydrogenated amorphous silicon by photothermal deflection spectroscopyPhysical Review B, 1982
- Defect states in doped and compensated-Si: HPhysical Review B, 1981