GaAsSbN: a new low-bandgap material for GaAs substrates
- 22 July 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (15) , 1246-1248
- https://doi.org/10.1049/el:19990864
Abstract
A new low-bandgap III-V compound grown on GaAs (GaAsSbN) has been investigated. Strained quantum wells were realised by molecular beam epitaxy with a nitrogen plasma source. The influence of Sb content on the level of nitrogen incorporation has been examined and no strong dependence was found. This material offers an interesting alternative to InGaAsN for developing 1.3 and 1.55 µm laser sources on GaAs substrates: a GaAs0.729Sb0.259N0.012/GaAs quantum well has exhibited a room-temperature photoluminescence peak wavelength as long as 1.52 µm. This emission is shifted to 1.3 µm after post-growth annealing.Keywords
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